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PDF HGTP3N60A4 Data sheet ( Hoja de datos )
| Número de pieza | HGTP3N60A4 | |
| Descripción | 600V/ SMPS Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTD3N60A4S, HGTP3N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Ordering Information
PART NUMBER
HGTD3N60A4S
PACKAGE
TO-252AA
BRAND
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• 12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB
COLLECTOR
(FLANGE)
E
C
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
1 page  
HGTD3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
112
VGE = 15V, TJ = 125oC
104
96 VGE = 12V, TJ = 125oC
88
80 VGE = 15V, TJ = 25oC
72 VGE = 12V, TJ = 25oC
64
56
RG = 50Ω, L = 1mH, VCE = 390V
48
12345
ICE, COLLECTOR TO EMITTER CURRENT (A)
6
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
96
RG = 50Ω, L = 1mH, VCE = 390V
88
TJ = 125oC, VGE = 12V OR 15V
80
72
64
56
48 TJ = 25oC, VGE = 12V OR 15V
40
123456
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
16
12
8
TJ = 25oC
4
TJ = 125oC
TJ = -55oC
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
14
16 IG(REF) = 1mA, RL = 100Ω, TJ = 25oC
14
12 VCE = 600V
10
8
VCE = 200V
VCE = 400V
6
4
2
0
0 4 8 12 16 20
QG, GATE CHARGE (nC)
24
FIGURE 14. GATE CHARGE WAVEFORMS
28
250
RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
200
ICE = 4.5A
150
100 ICE = 3A
ICE = 1.5A
50
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 4.5A
ICE = 3A
100
ICE = 1.5A
30
3 10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGTP3N60A4.PDF ] | |
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