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Número de pieza | HGTP14N36G3VL | |
Descripción | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HGTP14N36G3VL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! December 2001
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
NOTE: May be exceeded if IGEM is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
1 page HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
25
+25oC
20
+175oC
15
VGE = 5V
10
5
0
24
6 8 10
L, INDUCTANCE (mH)
650
VGE = 5V
600
550
500
450
400
350
300
250
200
150
0
2
+25oC
+175oC
46
L , INDUCTANCE (mH)
8
10
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
FREQUENCY = 1MHz
CIES
CRES
COES
5 10 15 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF IG = 1mA, RL = 1.7Ω, TC = +25oC
12
6
10 5
8
VCE = 12V
6
VCE = 4V
4
VCE = 8V
2
4
3
2
1
00
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HGTP14N36G3VL.PDF ] |
Número de pieza | Descripción | Fabricantes |
HGTP14N36G3VL | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs | Fairchild Semiconductor |
HGTP14N36G3VL | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs | Intersil Corporation |
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