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HGTP12N60C3D の電気的特性と機能

HGTP12N60C3DのメーカーはIntersil Corporationです、この部品の機能は「24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTP12N60C3D
部品説明 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTP12N60C3D Datasheet, HGTP12N60C3D PDF,ピン配置, 機能
Data Sheet
HGTP12N60C3D, HGT1S12N60C3DS
January 2000 File Number 4261.1
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49182.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3D
HGT1S12N60C3DS
TO-220AB
TO-263AB
12N60C3D
12N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.
Symbol
C
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

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HGTP12N60C3D pdf, ピン配列
HGTP12N60C3D, HGT1S12N60C3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1.0A, dIEC/dt = 200A/µs
IGBT
Diode
- 32 40 ns
- 23 30 ns
- - 1.2 oC/W
- - 1.9 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
Typical Performance Curves
80
DUTY CYCLE <0.5%, VCE = 10V
70 PULSE DURATION = 250µs
60
50 TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
VGE = 15.0V
70 12.0V
60
50 10.0V
40
30
20
10
0
0
9.0V
8.5V
8.0V
7.5V
7.0V
2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 10V
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
60
50
TC = 25oC
40
TC = 150oC
30
20
10
0
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3


3Pages


HGTP12N60C3D 電子部品, 半導体
HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = PD x ZθJC x RθJC + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PD
100
t1
t2
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
50
40
30
100oC
20
150oC
10
25oC
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VEC, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
35
TC = 25oC, dIEC/dt = 200A/ms
30
25
20
trr
ta
15
10 tb
5
0
0 5 10 15 20
IEC, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveform
HGTP12N60C3D
RG = 25
L = 100µH
+
VDD = 480V
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
10%
EOFF EON
90%
10%
td(OFF)I t
tri
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
6

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共有リンク

Link :


部品番号部品説明メーカ
HGTP12N60C3

24A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor
Fairchild Semiconductor
HGTP12N60C3

24A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP12N60C3D

24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGTP12N60C3D

24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation


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