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PDF 39VF1602 Data sheet ( Hoja de datos )

Número de pieza 39VF1602
Descripción SST39VF1602
Fabricantes Silicon Storage Technology 
Logotipo Silicon Storage Technology Logotipo



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No Preview Available ! 39VF1602 Hoja de datos, Descripción, Manual

16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
FEATURES:
Preliminary Specifications
• Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring high performance Word-Program, the
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
©2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
1
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Free Datasheet http://www.datasheet4u.net/

1 page




39VF1602 pdf
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Preliminary Specifications
Product Identification
The Product Identification mode identifies the devices as
the SST39VF1601, SST39VF1602, SST39VF3201,
SST39VF3202, SST39VF6401, SST39VF6402, and
manufacturer as SST. This mode may be accessed soft-
ware operations. Users may use the Software Product
Identification operation to identify the part (i.e., using the
device ID) when using multiple manufacturers in the same
socket. For details, see Table 6 for software operation,
Figure 11 for the Software ID Entry and Read timing dia-
gram and Figure 21 for the Software ID Entry command
sequence flowchart.
TABLE 3: PRODUCT IDENTIFICATION
Manufacturer’s ID
Device ID
SST39VF1601
SST39VF1602
SST39VF3201
SST39VF3202
SST39VF6401
SST39VF6402
Address
0000H
0001H
0001H
0001H
0001H
0001H
0001H
Data
BFH
234BH
234AH
235BH
235AH
236BH
236AH
T3.2 1223
Security ID
The SST39VF160x/320x/640x devices offer a 256-bit
Security ID space. The Secure ID space is divided into two
128-bit segments - one factory programmed segment and
one user programmed segment. The first segment is pro-
grammed and locked at SST with a random 128-bit num-
ber. The user segment is left un-programmed for the
customer to program as desired.
To program the user segment of the Security ID, the user
must use the Security ID Word-Program command. To
detect end-of-write for the SEC ID, read the toggle bits. Do
not use Data# Polling. Once this is complete, the Sec ID
should be locked using the User Sec ID Program Lock-Out.
This disables any future corruption of this space. Note that
regardless of whether or not the Sec ID is locked, neither
Sec ID segment can be erased.
The Secure ID space can be queried by executing a three-
byte command sequence with Enter Sec ID command
(88H) at address 5555H in the last byte sequence. To exit
this mode, the Exit Sec ID command should be executed.
Refer to Table 6 for more details.
Product Identification Mode Exit/
CFI Mode Exit
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exit is accom-
plished by issuing the Software ID Exit command
sequence, which returns the device to the Read mode.
This command may also be used to reset the device to the
Read mode after any inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. Please note that the Software ID Exit/
CFI Exit command is ignored during an internal Program or
Erase operation. See Table 6 for software command
codes, Figure 13 for timing waveform, and Figures 21 and
22 for flowcharts.
©2003 Silicon Storage Technology, Inc.
5
S71223-03-000
11/03
Free Datasheet http://www.datasheet4u.net/

5 Page





39VF1602 arduino
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Preliminary Specifications
TABLE 10: DEVICE GEOMETRY INFORMATION FOR SST39VF3201/3202
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0016H
0001H
0000H
0000H
0000H
0002H
00FFH
0003H
0010H
0000H
003FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (16H = 22; 222 = 4 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 1023 + 1 = 1024 (03FFH = 1023)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 63 + 1 = 64 blocks (003FH = 63)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T10.2 1223
TABLE 11: DEVICE GEOMETRY INFORMATION FOR SST39VF6401/6402
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0017H
0001H
0000H
0000H
0000H
0002H
00FFH
0007H
0010H
0000H
007FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (17H = 23; 223 = 8 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of bytes in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 2047 + 1 = 2048 sectors (07FFH = 2047)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y =127 + 1 = 128 blocks (007FH = 127)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T11.2 1223
©2003 Silicon Storage Technology, Inc.
11
S71223-03-000
11/03
Free Datasheet http://www.datasheet4u.net/

11 Page







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