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HGTP10N50E1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTP10N50E1
部品説明 10A/ 12A/ 400V and 500V N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HGTP10N50E1 Datasheet, HGTP10N50E1 PDF,ピン配置, 機能
HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
April 1995
10A, 12A,
400V and 500V N-Channel IGBTs
Features
• 10A and 12A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFI: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH12N40C1
TO-218AC
G12N40C1
HGTH12N40E1
TO-218AC
G12N40E1
HGTH12N50C1
TO-218AC
G12N50C1
HGTH12N50E1
TO-218AC
G12N50E1
HGTP10N40C1
TO-220AB
G10N40C1
HGTP10N40E1
TO-220AB
G10N40E1
HGTP10N50C1
TO-220AB
G10N50C1
HGTP10N50E1
TO-220AB
G10N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH12N40C1 HGTH12N50C1
HGTH12N40E1 HGTH12N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
15
±20
12
17.5
75
0.6
-55 to +150
500
500
15
±20
12
17.5
75
0.6
-55 to +150
HGTP10N40C1
HGTP10N40E1
400
400
-5
±20
10
17.5
60
0.48
-55 to +150
HGTP10N50C1
HGTP10N50E1
500
500
-5
±20
10
17.5
60
0.48
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-15
File Number 1697.3

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