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HGTP10N40F1D PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTP10N40F1D
部品説明 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HGTP10N40F1D Datasheet, HGTP10N40F1D PDF,ピン配置, 機能
April 1995
HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns
Description
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC. The diode used in parallel with the IGBT is an
ultrafast (tRR < 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40F1D TO-220AB
10N40F1D
HGTP10N50F1D TO-220AB
10N50F1D
NOTE: When ordering, use the entire part number
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
NOTE:
1. TJ = +150oC, Min. RGE = 25without latch.
HGTP10N40F1D
400
400
12
10
12
±20
16
10
75
0.6
-55 to +150
260
HGTP10N50F1D
500
500
12
10
12
±20
16
10
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/oC
oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-25
File Number 2751.2

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HGTP10N40F1D

10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil Corporation
Intersil Corporation

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