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HGTP10N40E1D PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTP10N40E1D
部品説明 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HGTP10N40E1D Datasheet, HGTP10N40E1D PDF,ピン配置, 機能
April 1995
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTP10N40C1D
HGTP10N40E1D
400
400
±20
17.5
10
75
0.6
-55 to +150
HGTP10N50C1D
HGTP10N50E1D
500
500
±20
17.5
10
75
0.6
-55 to +150
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
File Number 2405.5

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