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PDF HGTP10N40E1D Data sheet ( Hoja de datos )
| Número de pieza | HGTP10N40E1D | |
| Descripción | 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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April 1995
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTP10N40C1D
HGTP10N40E1D
400
400
±20
17.5
10
75
0.6
-55 to +150
HGTP10N50C1D
HGTP10N50E1D
500
500
±20
17.5
10
75
0.6
-55 to +150
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
File Number 2405.5
1 page  
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves (Continued)
1000
900
800
VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25Ω
20A, 40E1/50E1
700
600 20A, 40C1/50C1
500
400
10A, 40E1/50E1
300
200 10A, 40C1/50C1
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
100
TYPICAL DIODE ON VOLTAGE
500 10
RL = 25Ω
IG(REF) = 0.76mA
VCC = BVCES
GATE-
VGE = 10V
375 EMITTER
VOLTAGE
8
VCC = 0.25BVCES
6
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
4
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
125 BY THIS NORMALIZATION.
2
COLLECTOR-EMITTER VOLTAGE
00
IG(REF)
20
IG(ACT)
TIME (µs)
IG(REF)
80
IG(ACT)
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260)
TYPICAL REVERSE RECOVERY TIME
10
TJ = +150oC
TJ = +100oC
1 TJ = +25oC
TJ = -50oC
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VEC, EMITTER-COLLECTOR (V)
FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR
VOLTAGE vs CURRENT FOR ALL TYPES
Test Circuit
2
60
50
40
dIEC/dT ≥ 100A/µs
30 VR = 30V, TJ = +25oC
20
10
0 2 4 6 8 10 12 14 16 18 20
IEC, EMITTER-COLLECTOR CURRENT (A)
FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR
ALL TYPES
1/RG = 1/RGEN + 1/RGE
RGEN = 100Ω
20V
0V
RL = 13Ω
L = 50µH
VCE(CLP)=
300V
VCC
RGE = 100Ω
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-24
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGTP10N40E1D.PDF ] | |
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