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HGTH20N50C1 の電気的特性と機能

HGTH20N50C1のメーカーはIntersil Corporationです、この部品の機能は「15A/ 20A/ 400V and 500V N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTH20N50C1
部品説明 15A/ 20A/ 400V and 500V N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTH20N50C1 Datasheet, HGTH20N50C1 PDF,ピン配置, 機能
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Power Supplies
• Motor Drives
• Protection Circuits
Description
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
-5
±20
20
35
100
0.8
-55 to +150
500
500
-5
±20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-61
File Number 2174.3

1 Page





HGTH20N50C1 pdf, ピン配列
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
40
VGE = 10V, RGEN = RGS = 50
35
30
25
20
15
10
5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
100
80
60
40
20
0 +25 +50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TC, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
30 DUTY CYCLE = 0.5% MAX.
25
20
15
10
+25oC
-40oC
5
+125oC
0
0 2.5 5.0 7.5 10.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
VGE = 20V
30 VGE = 10V
VGE = 8V
25
TC = +25oC
VGE = 7V
VGE = 6V
20
15 VGE = 5V
10
5 VGE = 4V
0
01 2 34 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX.
25
20
15 +25oC
10
5
0
012 34
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-63


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共有リンク

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部品番号部品説明メーカ
HGTH20N50C1

15A/ 20A/ 400V and 500V N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTH20N50C1D

20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil Corporation
Intersil Corporation


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