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HGTH20N40E1D PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTH20N40E1D
部品説明 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HGTH20N40E1D Datasheet, HGTH20N40E1D PDF,ピン配置, 機能
April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1µs, 0.5µs
• Low On-State Voltage
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D TO-218AC
G20N40C1D
HGTH20N40E1D TO-218AC
G20N40E1D
HGTH20N50C1D TO-218AC
G20N50C1D
HGTH20N50E1D TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTH20N40C1D
HGTH20N40E1D
400
400
±20
20
35
35
20
100
0.8
-55 to +150
HGTH20N50C1D
HGTH20N50E1D
500
500
±20
20
35
35
20
100
0.8
-55 to +150
UNITS
V
V
V
A
A
A
A
W
W/oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-76
File Number 2271.4

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