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HGTH20N40E1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTH20N40E1
部品説明 15A/ 20A/ 400V and 500V N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HGTH20N40E1 Datasheet, HGTH20N40E1 PDF,ピン配置, 機能
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Power Supplies
• Motor Drives
• Protection Circuits
Description
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
-5
±20
20
35
100
0.8
-55 to +150
500
500
-5
±20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-61
File Number 2174.3

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