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4435GM-HF の電気的特性と機能

4435GM-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「 AP4435GM-HF」です。


製品の詳細 ( Datasheet PDF )

部品番号 4435GM-HF
部品説明 AP4435GM-HF
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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4435GM-HF Datasheet, 4435GM-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP4435GM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
20mΩ
-9A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
- 30
+ 20
-9
-7.3
-50
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200811216
Free Datasheet http://www.datasheet4u.net/

1 Page





4435GM-HF pdf, ピン配列
50
T A =25 o C
-10V
-7.0V
40 -5.0V
-4.5V
30 V G = -3.0V
20
10
0
01234
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
32
I D = -5A
28 T A =25 o C
24
20
16
12
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0.1 0.3 0.5 0.7 0.9 1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
AP4435GM-HF
50
T A =150 o C
-10V
-7.0V
40 -5.0V
-4.5V
30
V G = -3.0V
20
10
0
0246
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = -7A
1.4 V G = -10V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
150
1.8
1.6
1.4
1.2
1
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Free Datasheet http://www.datasheet4u.net/


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共有リンク

Link :


部品番号部品説明メーカ
4435GM-HF

AP4435GM-HF

Advanced Power Electronics
Advanced Power Electronics


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