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HGTG7N60A4D の電気的特性と機能

HGTG7N60A4DのメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG7N60A4D
部品説明 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTG7N60A4D Datasheet, HGTG7N60A4D PDF,ピン配置, 機能
Data Sheet
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG7N60A4D
HGTP7N60A4D
TO-247
TO-220AB
7N60A4D
7N60A4D
HGT1S7N60A4DS
TO-263AB
7N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
C
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
CG
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B

1 Page





HGTG7N60A4D pdf, ピン配列
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 7A
IEC = 7A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
- 2.4
-
V
- 34
-
ns
- 22
-
ns
- - 1.0 oC/W
- - 2.2 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
35
VGE = 15V
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
40
TJ = 150oC, RG = 25, VGE = 15V, L = 100µH
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
TC VGE
75oC 15V
200
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.0oC/W, SEE NOTES
TJ = 125oC, RG = 25, L = 1mH, V CE = 390V
30
1 5 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16 VCE = 390V, RG = 25, TJ = 125oC 140
14 120
12 ISC 100
10 80
8 60
6 tSC 40
4 20
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B


3Pages


HGTG7N60A4D 電子部品, 半導体
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8 CIES
0.6
0.4
0.2 COES
CRES
0
0 20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.8 DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
2.6
2.4
ICE = 14A
2.2
2.0
1.8
9
ICE = 7A
ICE = 3.5A
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
35
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
30
25
20
125oC
25oC
15
10
5
0
01234
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
60
50 125oC tb
40
IEC = 7A, VCE = 390V
30
20
10
100
125oC ta
25oC ta
25oC tb
200 300 400 500 600
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
700
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
100
dIEC/dt = 200A/µs
80
125oC trr
60
40
20
0
0
125oC tb
125oC ta
25oC trr
25oC ta
25oC tb
2 4 6 8 10 12 14
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
500
VCE = 390V
400
125oC, IEC = 7A
300 125oC, IEC = 3.5A
200
100
0
100
25oC, IEC = 7A
25oC, IEC = 3.5A
200 300 400 500 600
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
700
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B

6 Page



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共有リンク

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600V/ SMPS Series N-Channel IGBT

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