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PDF HGTG40N60B3 Data sheet ( Hoja de datos )
| Número de pieza | HGTG40N60B3 | |
| Descripción | 70A/ 600V/ UFS Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTG40N60B3
January 2000 File Number 3943.3
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 70A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTG40N60B3
Typical Performance Curves (Unless Otherwise Specified) (Continued)
300
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 15V
250
TJ = 150oC, VGE = 10V
200
TJ = 25oC, VGE = 15V
150
TJ = 25oC, VGE = 15V
100
20 40
60
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
180
RG = 3Ω, L = 100µH, VCE = 480V
140
TJ = 150oC, VGE = 10V AND 15V
100
60
TJ = 25oC, VGE = 10V AND 15V
20
20 40 60 80 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
200
DUTY CYCLE = <0.5%, VCE = 10V
PULSE DURATION = 25µs
160
120
80 TC = 25oC
40 TC = 150oC
TC = -55oC
0
4 5 6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25oC
12 VCE = 400V
VCE = 600V
9
6
VCE = 200V
3
0
0 50 100 150 200 250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
300
14
FREQUENCY = 400kHz
12
CIES
10
8
6
4
COES
2
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTG40N60B3.PDF ] | |
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