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PDF HGTG32N60E2 Data sheet ( Hoja de datos )
| Número de pieza | HGTG32N60E2 | |
| Descripción | 32A/ 600V N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTG32N60E2
April 1995
32A, 600V N-Channel IGBT
Features
Package
• 32A, 600V
• Latch Free Operation
• Typical Fall Time - 600ns
• High Input Impedance
• Low Conduction Loss
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Description
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
This device incorporates generation two design techniques
which yield improved peak current capability and larger short cir-
cuit withstand capability than previous designs.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG32N60E2
TO-247
G32N60E2
NOTE: When ordering, use the entire part number.
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2)at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG32N60E2
600
600
50
32
200
±20
±30
200A at 0.8 BVCES
208
1.67
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 360V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-120
File Number 2828.3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HGTG32N60E2.PDF ] | |
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