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HGTG30N60B3 の電気的特性と機能

HGTG30N60B3のメーカーはIntersil Corporationです、この部品の機能は「60A/ 600V/ UFS Series N-Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG30N60B3
部品説明 60A/ 600V/ UFS Series N-Channel IGBT
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTG30N60B3 Datasheet, HGTG30N60B3 PDF,ピン配置, 機能
Data Sheet
HGTG30N60B3
January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3
TO-247
G30N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGTG30N60B3 pdf, ピン配列
HGTG30N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3
L = 1mH
Test Circuit (Figure 17)
- 32
-
ns
- 24
-
ns
- 275 320 ns
-
90 150
ns
- 500
-
µJ
Turn-On Energy (Note 4)
EON2
- 1300 1550 µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
- 1600 1900 µJ
- - 0.6 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25 50
75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
100
TJ = 150oC, RG = 3, L = 1mH,
VCE = 480V
10
1
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
75oC
75oC
110oC
(DUTY FACTOR = 50%)
RØJC = 0.6oC/W, SEE NOTES
110oC
0.1
5 10 20
VGE
15V
10V
15V
10V
40
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
225 TJ = 150oC, RG = 3, VGE = 15V, L =100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
VCE = 360V, RG = 3, TJ = 125oC
18
500
450
16 400
ISC
14 350
12 300
10 250
tSC
8 200
6 150
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


HGTG30N60B3 電子部品, 半導体
HGTG30N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
t1
t2
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
101
HGTP30N60B3D
RG = 3
L = 1mH
+
VDD = 480V
-
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. SWITCHING TEST WAVEFORMS
6

6 Page



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共有リンク

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