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PDF HGTG30N60B3 Data sheet ( Hoja de datos )
| Número de pieza | HGTG30N60B3 | |
| Descripción | 60A/ 600V/ UFS Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HGTG30N60B3
August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3
TO-247
G30N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B2
1 page  
HGTG30N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
300
RG = 3Ω, L = 1mH,
VCE = 480V
250
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
200
120
RG = 3Ω, L = 1mH, VCE = 480V
100 TJ = 150oC, VGE = 10V AND 15V
80
150
100
10
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
60
TJ = 25oC, VGE = 10V AND 15V
40
10
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
60
300
DUTY CYCLE <0.5%, VCE = 10V
250 PULSE DURATION = 250µs
200
150
TC = 25oC
100
TC = -55oC
TC = 150oC
50
0
4 5 6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16 Ig (REF) = 1mA, RL = 10Ω, TC = 25oC
14
12
VCE = 600V
10
8
6
VCE = 200V
4
VCE = 400V
2
0
0 50 100 150
QG, GATE CHARGE (nC)
200
FIGURE 14. GATE CHARGE WAVEFORMS
10
FREQUENCY = 1MHz
8
CIES
6
4
COES
2
CRES
0
0 5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2003 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B2
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGTG30N60B3.PDF ] | |
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