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PDF HGTG30N120CN Data sheet ( Hoja de datos )
| Número de pieza | HGTG30N120CN | |
| Descripción | 75A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGTG30N120CN
January 2000 File Number 4483.3
75A, 1200V, NPT Series N-Channel IGBT
The HGTG30N120CN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49281.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N120CN
TO-247
G30N120CN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 75A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTG30N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
600
RG = 3Ω, L = 1mH, VCE = 960V
500
400 TJ = 150oC, VGE = 12V, VGE = 15V
300
200
TJ = 25oC, VGE = 12V, VGE = 15V
100
5 10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
800
RG = 3Ω, L = 1mH, VCE = 960V
700
600
500
TJ = 150oC, VGE = 12V AND 15V
400
300
200
100 TJ = 25oC, VGE = 12V AND 15V
0
5 10 15 20 25 30 35 40 45 50 55 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
500
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
TC = -55oC
400 TC = 25oC
300
TC = 150oC
200
100
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
10
CIES
8
FREQUENCY = 1MHz
6
4
2 COES
CRES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
16
IG(REF) = 2mA, RL = 20Ω, TC = 25oC
14
12 VCE = 1200V
10
8
VCE = 400V
VCE = 800V
6
4
2
0
0 50 100 150 200 250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
300
40 DUTY CYCLE < 0.5%, TC = 110oC
35 PULSE DURATION = 250µs
30
VGE = 15V
25
20
VGE = 10V
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
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