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HGTG20N60A4 の電気的特性と機能

HGTG20N60A4のメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG20N60A4
部品説明 600V/ SMPS Series N-Channel IGBTs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTG20N60A4 Datasheet, HGTG20N60A4 PDF,ピン配置, 機能
Data Sheet
HGTG20N60A4, HGTP20N60A4
December 2001
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER
HGTP20N60A4
PACKAGE
TO-220AB
BRAND
20N60A4
HGTG20N60A4
TO-247
20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
C
G
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B

1 Page





HGTG20N60A4 pdf, ピン配列
HGTG20N60A4, HGTP20N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3
L = 500µH
Test Circuit (Figure 20)
MIN TYP MAX UNITS
- 15 21 ns
- 13 18 ns
- 105 135 ns
- 55 73 ns
- 115
-
µJ
Turn-On Energy (Note 3)
EON2
- 510 600 µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 330 500 µJ
-
-
0.43
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
DIE CAPABILITY
VGE = 15V
80
PACKAGE LIMIT
60
40
20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
500
TC VGE
75oC 15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3, L = 500µH, VCE = 390V
40
5 10 20 30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
120 TJ = 150oC, RG = 3, VGE = 15V, L = 100µH
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
14 VCE = 390V, RG = 3, TJ = 125oC 450
12 400
ISC
10 350
8 300
6 250
4 tSC 200
2 150
0 100
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B


3Pages


HGTG20N60A4 電子部品, 半導体
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
5
FREQUENCY = 1MHz
4
2.2 DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
2.1
3
CIES
2
2.0
ICE = 30A
1.9 ICE = 20A
1 COES
CRES
0
0 20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
1.8 ICE = 10A
1.7
8
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-5
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-1
100
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
RG = 3
L = 500µH
DUT
+
-
VDD = 390V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
EOFF
10%
EON2
90%
ICE 10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B

6 Page



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