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PDF HGTG20N50C1D Data sheet ( Hoja de datos )
| Número de pieza | HGTG20N50C1D | |
| Descripción | 20A/ 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTG20N50C1D
April 1995
20A, 500V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
Package
• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC. The diode used in
parallel with the IGBT is an ultrafast (tRR < 60ns) with soft
recovery characteristic.
Terminal Diagram
G
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N50C1D TO-247
G20N50C1D
NOTE: When ordering, use the entire part number.
C
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
NOTE: 1. TJ = +150oC, Minimum RGE = 25Ω without latch
HGTG20N50C1D
500
500
26
20
35
±20
26
20
75
0.8
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/oC
oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-71
File Number 2796.3
1 page  
HGTG20N50C1D
Typical Performance Curves (Continued)
100
Test Circuit
10 TJ = +150oC
1.0
TJ = +100oC
0.1
TJ = +25oC
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VEC, EMITTER-COLLECTOR VOLTAGE (V)
FIGURE 15. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC
RL = 4Ω
L = 25µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
20V
0V
RGE = 50Ω
VCE (CLP) =
300V
80V
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
3-75
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HGTG20N50C1D.PDF ] | |
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