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PDF HGTG20N120E2 Data sheet ( Hoja de datos )
| Número de pieza | HGTG20N120E2 | |
| Descripción | 34A/ 1200V N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
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Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG20N120E2 TO-247
BRAND
G20N120E2
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Terminal Diagram
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Breakdown Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG20N120E2
1200
1200
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25Ω
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-98
File Number 3370.2
1 page  
Test Circuit
HGTG20N120E2
L = 50µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
20V
0V
RGE = 50Ω
VCC
960V
+
-
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
Operating Frequency Information
Handling Precautions for IGBTs
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I is defined as the time between the 90%
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional fre-
quency limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition. fMAX2 is defined by fMAX2 = (Pd - Pc)/
WOFF. The allowable dissipation (Pd) is defined by Pd =
(TJMAX - TC)/RθJC. The sum of device switching and conduc-
tion losses must not exceed Pd. A 50% duty factor was used
(Figure 10) and the conduction losses (Pc) are approximated
by Pc = (VCE • ICE)/2. WOFF is defined as the integral of the
instantaneous power loss starting at the trailing edge of the
input pulse and ending at the point where the collector
current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2 •
WOFF. Turn-on switching losses are not included because
they can be greatly influenced by external circuit conditions
and components.
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “† ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
† Trademark Emerson and Cumming, Inc.
3-102
5 Page | ||
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| PDF Descargar | [ Datasheet HGTG20N120E2.PDF ] | |
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