|
|
HGTG20N100D2のメーカーはIntersil Corporationです、この部品の機能は「20A/ 1000V N-Channel IGBT」です。 |
部品番号 | HGTG20N100D2 |
| |
部品説明 | 20A/ 1000V N-Channel IGBT | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとHGTG20N100D2ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Features
Package
• 34A, 1000V
• Latch Free Operation
• Typical Fall Time 520ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
HGTG20N100D2
PACKAGE
TO-247
BRAND
G20N100D2
JEDEC STYLE TO-247
EMITTER
COLLECTOR
(BOTTOM SIDE
METAL)
COLLECTOR
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25Ω.
HGTG20N100D2
1000
1000
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-93
File Number 2826.3
1 Page HGTG20N100D2
Typical Performance Curves (Continued)
35
VGE = 15V
30
25
VGE = 10V
20
15
10
5
0
+25
+50
+75
+100
+125
+150
TC, CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
6000
5000
f = 1MHz
4000
3000
2000
COSS
CISS
1000
CRSS
0
0
5
10 15
20 25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
5
TJ = +150oC
4
3
2
1
VGE = 10V
VGE = 15V
2.5
VCE = 800V, TJ = +150oC,
VGE = 15V, RG = 25Ω, L = 50µH
2.0
1.5
1.0
0.5
0.0
1
10 40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
1000
750
VCC = BVCES
RL = 29Ω
IG(REF) = 1.8mA
VGE = 10V
GATE-
EMITTER
VOLTAGE
VCC = BVCES
10
500 5
0.75 BVCES 0.75 BVCES
0.50 BVCES 0.50 BVCES
250 0.25 BVCES 0.25 BVCES
COLLECTOR-EMITTER VOLTAGE
0
IG(REF)
20
IG(ACT)
TIME (µs)
IG(REF)
80
IG(ACT)
0
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
10
TJ = +150oC, VGE = 15V,
RG = 25Ω, L = 50µH
VCE = 800V, VGE = 10V, 15V
1.0
VCE = 400V, VGE = 10V, 15V
0
1 10 40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
0.1
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
40
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
3-95
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ HGTG20N100D2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HGTG20N100D2 | 20A/ 1000V N-Channel IGBT | Intersil Corporation |