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HGTG18N120BND の電気的特性と機能

HGTG18N120BNDのメーカーはIntersil Corporationです、この部品の機能は「54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG18N120BND
部品説明 54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTG18N120BND Datasheet, HGTG18N120BND PDF,ピン配置, 機能
Data Sheet
HGTG18N120BND
January 2000 File Number 4555.1
54A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49304.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BND
TO-247
18N120BND
NOTE: When ordering, use the entire part number.
Symbol
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGTG18N120BND pdf, ピン配列
HGTG18N120BND
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 18A
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 20)
IEC = 18A
IEC = 18A, dIEC/dt = 200A/µs
IEC = 2A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 21 26 ns
- 17 22 ns
- 205 240 ns
- 140 200 ns
- 3.7 4.9 mJ
- 2.6 3.1 mJ
- 2.6 3.2
V
- 60 75 ns
- 44 55 ns
-
-
0.32
oC/W
-
-
0.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
120 TJ = 150oC, RG = 3, VGE = 15V, L = 200µH
100
80
60
40
20
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3


3Pages


HGTG18N120BND 電子部品, 半導体
HGTG18N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
6
FREQUENCY = 1MHz
5
CIES
4
3
2
1 COES
0 CRES
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
30 DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
25
VGE = 15V OR 12V
20
VGE = 10V
15
10
5
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
10-1
t2
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
100
150oC
10
25oC
1
01 2 3 45
VF, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
70 TC = 25oC, dIEC/dt = 200A/µs
60
50
40
30
20
10
1
trr
ta
tb
2 5 10
IF, FORWARD CURRENT (A)
20
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
6

6 Page



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共有リンク

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部品番号部品説明メーカ
HGTG18N120BN

54A/ 1200V/ NPT Series N-Channel IGBT

Fairchild Semiconductor
Fairchild Semiconductor
HGTG18N120BN

54A/ 1200V/ NPT Series N-Channel IGBT

Intersil Corporation
Intersil Corporation
HGTG18N120BND

54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor
Fairchild Semiconductor
HGTG18N120BND

54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Intersil Corporation
Intersil Corporation


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