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HGTG12N60A4D の電気的特性と機能

HGTG12N60A4DのメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG12N60A4D
部品説明 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTG12N60A4D Datasheet, HGTG12N60A4D PDF,ピン配置, 機能
Data Sheet
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Ordering Information
PART NUMBER
HGTG12N60A4D
PACKAGE
TO-247
BRAND
12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
TO-220AB
TO-263AB
12N60A4D
12N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B

1 Page





HGTG12N60A4D pdf, ピン配列
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 12A
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
- 2.2
-
V
- 30
-
ns
- 18
-
ns
-
-
0.75
oC/W
- - 2.0 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V,
50
40
30
20
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
70 TJ = 150oC, RG = 10, VGE = 15V, L = 200µH
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
300
TC VGE
75oC 15V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
TJ = 125oC, RG = 10, L = 500µH, VCE = 390V
10
13
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
18 VCE = 390V, RG = 10, TJ = 125oC
16
14 ISC
12
10
8
6 tSC
4
2
0
9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
300
275
250
225
200
175
150
125
100
75
50
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B


3Pages


HGTG12N60A4D 電子部品, 半導体
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
3.0
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
0.5
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
14
DUTY CYCLE < 0.5%,
12 PULSE DURATION = 250µs
10
125oC
25oC
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
65
60
55 125oC tb
IEC = 12A, VCE = 390V
50
45
40
35 125oC ta
30
25
20 25oC ta
15
10 25oC tb
5
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
90
dIEC/dt = 200A/µs
80
70 125oC trr
60
50
125oC tb
40
30 125oC ta
20
25oC trr
25oC ta
10 25oC tb
0
1 2 3 4 5 6 7 8 9 10 11 12
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
400
350 VCE = 390V 125oC IEC = 12A
300
250 125oC IEC = 6A
200
150 25oC IEC = 12A
100
50 25oC IEC = 6A
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B

6 Page



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共有リンク

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部品番号部品説明メーカ
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600V/ SMPS Series N-Channel IGBTs

Fairchild Semiconductor
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HGTG12N60A4D

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG12N60A4D

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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