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HGTG11N120CN の電気的特性と機能

HGTG11N120CNのメーカーはFairchild Semiconductorです、この部品の機能は「43A/ 1200V/ NPT Series N-Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTG11N120CN
部品説明 43A/ 1200V/ NPT Series N-Channel IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTG11N120CN Datasheet, HGTG11N120CN PDF,ピン配置, 機能
Data Sheet
HGTG11N120CN, HGTP11N120CN,
HGT1S11N120CNS
December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CN
TO-247
G11N120CN
HGTP11N120CN
TO-220AB
11N120CN
HGT1S11N120CNS TO-263AB
11N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
Symbol
C
Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
G
E
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B

1 Page





HGTG11N120CN pdf, ピン配列
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC
ICE = 11A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 18)
- 23 26 ns
- 12 16 ns
- 180 240 ns
- 190 230 ns
- 0.4 0.5 mJ
Turn-On Energy (Note 4)
EON2
-
0.95
1.3
mJ
Turn-Off Energy (Note 5)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 11A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 18)
- 1.3 1.6 mJ
- 21 24 ns
- 12 16 ns
- 210 280 ns
- 340 400 ns
-
0.45
0.6
mJ
Turn-On Energy (Note 4)
EON2
- 1.9 2.5 mJ
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
EOFF
RθJC
- 2.1 2.5 mJ
-
-
0.42
oC/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
45
40
35
30
25
20
15
10
5
0
25
VGE = 15V
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
60
50
TJ = 150oC, RG = 10, VGE = 15V, L = 400µH
40
30
20
10
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B


3Pages


HGTG11N120CN 電子部品, 半導体
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
4
FREQUENCY = 1MHz
3
CIES
2
15
DUTY CYCLE < 0.5%, TC = 110oC
250µs PULSE TEST
12
VGE = 15V
9
VGE = 10V
6
1
CRES
0
0
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
3
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-210-5
t1
PD
t2
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
10-1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
Test Circuit and Waveforms
HGTG11N120CND
RG = 10
L = 2mH
+
- VDD = 960V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B

6 Page



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部品番号部品説明メーカ
HGTG11N120CN

43A/ 1200V/ NPT Series N-Channel IGBT

Fairchild Semiconductor
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