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HGTD7N60C3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTD7N60C3
部品説明 14A/ 600V/ UFS Series N-Channel IGBTs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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HGTD7N60C3 Datasheet, HGTD7N60C3 PDF,ピン配置, 機能
HGTD7N60C3,
S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3
January 1997
14A, 600V, UFS Series N-Channel IGBTs
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Description
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are
MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD7N60C3
TO-251AA
G7N60C
HGTD7N60C3S
TO-252AA
G7N60C
HGTP7N60C3
TO-220AB
G7N60C3
NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in tape and
reel, i.e. HGTD7N60C3S9A.
Formerly Developmental Type TA49115.
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-251AA
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTD7N60C3, HGTD7N60C3S
HGTP7N60C3
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
600
14
7
56
±20
±30
40A at 480V
60
0.48
100
-40 to 150
260
1
8
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 50Ω.
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1997
3-16
File Number 4141.2

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