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Datasheet HGTD6N40E1S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HGTD6N40E1S | 6A/ 400V and 500V N-Channel IGBTs HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• 6A, 400V and 500V • VCE(ON): 2.5V Max. • TFALL: 1.0µs • Low On-State Voltage • Fast Switching |  Intersil Corporation | igbt |
HGT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HGT1N30N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and th  Fairchild Semiconductor igbt | | |
| 2 | HGT1N40N60A4 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the Fairchild Semiconductor igbt | | |
| 3 | HGT1N40N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the Fairchild Semiconductor igbt | | |
| 4 | HGT1S10N120BNS | 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best featur Fairchild Semiconductor igbt | | |
| 5 | HGT1S10N120BNS | 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet January 2000 File Number 4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs com Intersil Corporation igbt | | |
| 6 | HGT1S11N120CNS | 43A/ 1200V/ NPT Series N-Channel IGBT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best fea Fairchild Semiconductor igbt | | |
| 7 | HGT1S11N120CNS | 43A/ 1200V/ NPT Series N-Channel IGBT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet January 2000 File Number 4577.2
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co Intersil Corporation igbt | |
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