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HGTD3N60C3 の電気的特性と機能

HGTD3N60C3のメーカーはFairchild Semiconductorです、この部品の機能は「6A/ 600V/ UFS Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTD3N60C3
部品説明 6A/ 600V/ UFS Series N-Channel IGBTs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTD3N60C3 Datasheet, HGTD3N60C3 PDF,ピン配置, 機能
SEMICONDUCTOR
HGTD3N60C3,
HGTD3N60C3S
June 1997
6A, 600V, UFS Series N-Channel IGBTs
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3
TO-251AA
G3N60C
HGTD3N60C3S
TO-252AA
G3N60C
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25oC and
150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
Symbol
N-CHANNEL ENHANCEMENT MODE
C
Packaging
JEDEC TO-251AA
EMITTER COLLECTOR
GATE
COLLECTOR
(FLANGE)
G
E
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1997
1
File Number 4139.3

1 Page





HGTD3N60C3 pdf, ピン配列
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves
20
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = 150oC
6
TC = 25oC
TC = -40oC
4
2
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
20
VGE = 15V
12V
18
16
14
10V
12
10
8 9.0V
6 8.5V
4 8.0V
2 7.5V
7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10 TC = -40oC
8 TC = 150oC
6
TC = 25oC
4
2
0
0123 4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16 TC = -40oC
14
TC = 25oC
12
10 TC = 150oC
8
6
4
2
0
01 2 345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
150
14 VCE = 360V, RGE = 82, TJ = 125oC
12
70
60
10
tSC
8
6
50
40
ISC
30
4 20
2 10
0
10
11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
0
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


HGTD3N60C3 電子部品, 半導体
HGTD3N60C3, HGTD3N60C3S
Test Circuit and Waveform
RG = 82
L = 1mH
RHRD460
+
VDD = 480V
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
10%
EOFF EON
90%
ICE 10%
td(OFF) I
tfI
trI
td(ON) I
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBDLD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
Operating Frequency Information for a Typical Device (Fig-
ure 13) is presented as a guide for estimating device perfor-
mance for a specific application. Other typical frequency vs
collector current (ICE) plots are possible using the informa-
tion shown for a typical unit in Figures 4, 7, 8, 11 and 12. The
operating frequency plot (Figure 13) of a typical device
shows fMAX1 or fMAX2 whichever is smaller at each point.
The information is based on measurements of a typical
device and is bounded by the maximum rated junction tem-
perature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
td(OFF)I is important when controlling output ripple under a
lightly loaded condition.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of VGEM. Exceeding the rated VGE can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
TC)/RθJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by PC =
(VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous power loss (ICE x VCE) during turn-
off. All tail losses are included in the calculation for EOFF; i.e.
the collector current equals zero (ICE = 0).
ECCOSORBDis a Trademark of Emerson and Cumming, Inc.
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HGTD3N60C3

6A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor
Fairchild Semiconductor
HGTD3N60C3S

6A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTD3N60C3S

6A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor
Fairchild Semiconductor


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