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HGTD3N60A4S の電気的特性と機能

HGTD3N60A4SのメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS Series N-Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTD3N60A4S
部品説明 600V/ SMPS Series N-Channel IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGTD3N60A4S Datasheet, HGTD3N60A4S PDF,ピン配置, 機能
Data Sheet
HGTD3N60A4S, HGTP3N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Ordering Information
PART NUMBER
HGTD3N60A4S
PACKAGE
TO-252AA
BRAND
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• 12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB
COLLECTOR
(FLANGE)
E
C
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1

1 Page





HGTD3N60A4S pdf, ピン配列
HGTD3N60A4S, HGTP3N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 3A
VCE = 390V
VGE = 15V
RG = 50
L = 1mH
Test Circuit - Figure 20
- 5.5 8
ns
- 12 15 ns
- 110 165 ns
-
70 100
ns
- 37
-
µJ
Turn-On Energy (Note 3)
EON2
-
90 100
µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 50 80 µJ
- - 1.8 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves Unless Otherwise Specified
20 20
VGE = 15V
TJ = 150oC, RG = 50, VGE = 15V, L = 200µH
16 16
12 12
88
44
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
600
TC VGE
75oC 15V
300
200
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
100 PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.8oC/W, SEE NOTES
TJ = 125oC, RG = 50, L = 1mH, VCE = 390V
50
1 2 34
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
6
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
VCE = 390V, RG = 50, TJ = 125oC
18
tSC
16
64
56
48
14
ISC
12
40
32
10 24
8 16
68
40
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1


3Pages


HGTD3N60A4S 電子部品, 半導体
HGTD3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
700
FREQUENCY = 1MHz
600
500
400
CIES
300
CRES
200
100
0
0
COES
20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.7
DUTY CYCLE < 0.5%, TJ = 25oC
2.6 PULSE DURATION = 250µs,
2.5
2.4 ICE = 4.5A
2.3 ICE = 3A
2.2
2.1
2.0
8
ICE = 1.5A
10 12 14
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-5
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
10-1
100
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1

6 Page



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部品番号部品説明メーカ
HGTD3N60A4

600V/ SMPS Series N-Channel IGBT

Fairchild Semiconductor
Fairchild Semiconductor
HGTD3N60A4S

600V/ SMPS Series N-Channel IGBT

Fairchild Semiconductor
Fairchild Semiconductor
HGTD3N60A4S

600V/ SMPS Series N-Channel IGBT

Intersil Corporation
Intersil Corporation


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