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HGT5A40N60A4D の電気的特性と機能

HGT5A40N60A4DのメーカーはIntersil Corporationです、この部品の機能は「600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT5A40N60A4D
部品説明 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGT5A40N60A4D Datasheet, HGT5A40N60A4D PDF,ピン配置, 機能
Data Sheet
HGT5A40N60A4D
February 2000 File Number 4783.1
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49347. The diode
used in anti-parallel is the development type 49374.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT5A40N60A4D
TO-247-ST
40N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation at 390V, 40A
• 200kHz Operation at 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE STRETCH TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGT5A40N60A4D pdf, ピン配列
HGT5A40N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2
L = 200µH
Test Circuit (Figure 24)
IEC = 40A
IEC = 40A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 27
-
ns
- 20
-
ns
- 185 225 ns
- 55 95 ns
- 400
-
µJ
- 1220 1400 µJ
- 700 800 µJ
- 2.25 2.7
V
- 48 55 ns
- 38 45 ns
- - 0.2 oC/W
- - 1 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
70
PACKAGE LIMITED
60
VGE = 15V
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225
TJ = 150oC, RG = 2.2, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
2-3


3Pages


HGT5A40N60A4D 電子部品, 半導体
HGT5A40N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
6
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
5 ETOTAL = EON2 +EOFF
ICE = 80A
4
3
2 ICE = 40A
1 ICE = 20A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
100 TJ = 125oC, L = 200µH
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10 ICE = 80A
ICE = 40A
1
ICE = 20A
0.11
10 100 500
RG, GATE RESISTANCE ()
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
14
FREQUENCY = 1MHz
12
10
8
CIES
6
4
COES
2
CRES
0
0 10 20 30 40 50 60 70 80 90
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
50
DUTY CYCLE < 0.5%,
45 PULSE DURATION = 250µs
40
35 TJ = 125oC
30
25
20
15 TJ = 25oC
10
5
0
0 0.5 1.0 1.5 2.0
VEC, FORWARD VOLTAGE (V)
2.5
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
ICE = 20A
1.9
8
9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
120
dIEC/dt = 200A/µs
110
100
90
125oC trr
80
70
60 125oC ta
50
40
30
20
10
0
0 5 10 15
125oC tb
25oC trr
25oC ta
25oC tb
20 25 30 35
IEC, FORWARD CURRENT (A)
40
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
2-6

6 Page



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部品番号部品説明メーカ
HGT5A40N60A4D

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Intersil Corporation
Intersil Corporation


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