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PDF HGT5A27N120BN Data sheet ( Hoja de datos )
| Número de pieza | HGT5A27N120BN | |
| Descripción | 72A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG27N120BN / HGT5A27N120BN
August 2002
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N120BN
TO-247
27N120BN
HGT5A27N120BN
TO-247-ST
27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• 72A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Avalanche Rated
Packaging
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
E
C
G
JEDEC STYLE TO-247-ST
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C1
1 page  
HGTG27N120BN / HGT5A27N120BN
Typical Performance Curves Unless Otherwise Specified (Continued)
400
RG = 3Ω, L = 1mH, VCE = 960V
350
VGE = 12V, VGE = 15V, TJ = 150oC
300
VGE = 12V, VGE = 15V, TJ = 25oC
250
250
RG = 3Ω, L = 1mH, VCE = 960V
200
150 TJ = 150oC, VGE = 12V OR 15V
100
200 50 TJ = 25oC, VGE = 12V OR 15V
150
5
10 15 20 25 30 35 40 45 50 55
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
0
5 10 15 20 25 30 35 40 45 50 55 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
350
DUTY CYCLE <0.5%, VCE = 20V
250µs PULSE TEST
300
250
200
150
TC = 25oC
100
TC = 150oC
50
TC = -55oC
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
10
FREQUENCY = 1MHz
8 CIES
6
4
CRES
2
COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2002 Fairchild Semiconductor Corporation
16 IG(REF) = 2mA, RL = 22.2Ω, TC = 25oC
14
VCE = 1200V
12
10
8
VCE = 400V
6
VCE = 800V
4
2
0
0 50 100 150 200 250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
300
40
DUTY CYCLE <0.5%, TC = 110oC
35 250µs PULSE TEST
30
25
VGE = 15V
VGE = 10V
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG27N120BN / HGT5A27N12BN Rev. C1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGT5A27N120BN.PDF ] | |
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