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PDF HGT4E30N60B3DS Data sheet ( Hoja de datos )
| Número de pieza | HGT4E30N60B3DS | |
| Descripción | 60A/ 600V/ UFS Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet
December 2001
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49170. The diode used in anti-parallel with the IGBT is the
development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
HGTG30N60B3D
PACKAGE
TO-247
BRAND
G30N60B3D
HGT4E30N60B3DS TO-268AA
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
TO-268AA
G
E
C
Symbol
C
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
G
E
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
1 page  
HGTG30N60B3D, HGT4E30N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
55
RG = 3Ω, L = 1mH, VCE = 480V
50
45
40 TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
10
TJ = 25oC, TJ = 150oC, VGE = 15V
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
250
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
200
TJ = 25oC, TJ = 150oC, VGE = 15V
150
100
50
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
60
300
RG = 3Ω, L = 1mH,
VCE = 480V
250
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
200
120
RG = 3Ω, L = 1mH, VCE = 480V
100 TJ = 150oC, VGE = 10V AND 15V
80
150
100
10
20 30 40 50
ICE , COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
60 TJ = 25oC, VGE = 10V AND 15V
40
10
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
DUTY CYCLE <0.5%, VCE = 10V
250 PULSE DURATION = 250µs
TC = -55oC
200
150 TC = 25oC
100 TC = 150oC
50
0
4 5 6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
11
16 Ig (REF) = 1mA, RL = 10Ω, TC = 25oC
14
12
VCE = 600V
10
8
6
VCE = 200V
4
VCE = 400V
2
0
0 50 100 150
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
200
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGT4E30N60B3DS.PDF ] | |
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