DataSheet.jp

HGT1S7N60C3DS の電気的特性と機能

HGT1S7N60C3DSのメーカーはIntersil Corporationです、この部品の機能は「14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S7N60C3DS
部品説明 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




このページの下部にプレビューとHGT1S7N60C3DSダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

HGT1S7N60C3DS Datasheet, HGT1S7N60C3DS PDF,ピン配置, 機能
Data Sheet
HGTP7N60C3D, HGT1S7N60C3DS
January 2000 File Number 4150.2
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTP7N60C3D and HGT1S7N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is
developmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60C3D
TO-220AB
G7N60C3D
HGT1S7N60C3DS TO-263AB
G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
Symbol
C
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGT1S7N60C3DS pdf, ピン配列
HGTP7N60C3D, HGT1S7N60C3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 7A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
- 25 35 ns
- 18 30 ns
- - 2.1 oC/W
- - 2.0 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
Typical Performance Curves
40 DUTY CYCLE <0.5%, VCE = 10V
35 PULSE DURATION = 250µs
30
25
20 TC = 150oC
TC = 25oC
15
TC = -40oC
10
5
0
46
8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
40 PULSE DURATION = 250µs,
35 DTCUT=Y25CoYCCLE <0.5%,
30
12.0V
10.0V
25
VGE = 15.0V
20
9.0V
15
8.5V
10
8.0V
5 7.5V
0 7.0V
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 10V
30
25
TC = -40oC
20
15
10
5
0
0
TC = 150oC
TC = 25oC
1234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
30
TC = 25oC
25
20
TC = 150oC
15
10
5
0
0 1234 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3


3Pages


HGT1S7N60C3DS 電子部品, 半導体
HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
30
10
175oC 100oC 25oC
1.0
0.5
0
0.5 1.0 1.5 2.0 2.5
VEC, FORWARD VOLTAGE (V)
3.0
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
Test Circuit and Waveforms
30 TC = 25oC, dIEC/dt = 200A/µs
25
20 trr
15 ta
10
tb
5
0
0.5 1
3
IEC, FORWARD CURRENT (A)
7
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
RG = 50
L = 1mH
RHRD660
+
- VDD = 480V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
VGE
VCE
ICE
90%
10%
EOFF EON
90%
10%
td(OFF) I
tfI
trI
td(ON) I
FIGURE 21. SWITCHING TEST WAVEFORMS

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ HGT1S7N60C3DS データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HGT1S7N60C3D

14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S7N60C3DS

14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S7N60C3DS

14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap