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PDF HGT1S7N60C3DS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S7N60C3DS | |
| Descripción | 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
| Fabricantes | Fairchild Semiconductor | |
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HGTP7N60C3D, HGT1S7N60C3D,
SEMICONDUCTOR
HGT1S7N60C3DS
January 1997
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is devel-
opmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
Terminal Diagram
HGTP7N60C3D
HGT1S7N60C3D
TO-220AB
TO-262AA
G7N60C3D
G7N60C3D
N-CHANNEL ENHANCEMENT MODE
C
HGT1S7N60C3DS TO-263AB
G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
G
Formerly Developmental Type TA49121.
E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . .
Average Diode Forward Current
..
at
......
110oC
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. IC110
I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
PPSoowwwitceehrr iDDngiissssSiiappfaaettiiooOnnpeTDroeatrtaainltigantgATrTCeCa=>a2t25T5oJoCC=
150oC, Figure
............
............
14
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SSOA
. . . PD
.....
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 50Ω.
HGTP7N60C3D, HGT1S7N60C3D
HGT1S7N60C3DS
600
14
7
8
56
±20
±30
40A at 480V
60
0.487
-40 to 150
260
1
8
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-22
File Number 4150.1
1 page  
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
Typical Performance Curves (Continued)
200
TJ = 150oC, TC = 75oC
50
TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH
100 RG = 50Ω, L = 1mH
40
VGE = 10V
VGE = 15V
30
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W
1
2
10
20
ICE, COLLECTOR-EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
20
10
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
1200
1000
800
CIES
FREQUENCY = 1MHz
600
400
200
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.044mA, RL = 50Ω, TC = 25oC
600 15
500 12.5
400 VCE = 200V 10
300 VCE = 400V 7.5
VCE = 600V
200 5
100 2.5
00
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
3-26
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGT1S7N60C3DS.PDF ] | |
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