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HGT1S5N120BNS の電気的特性と機能

HGT1S5N120BNSのメーカーはIntersil Corporationです、この部品の機能は「21A/ 1200V/ NPT Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S5N120BNS
部品説明 21A/ 1200V/ NPT Series N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGT1S5N120BNS Datasheet, HGT1S5N120BNS PDF,ピン配置, 機能
Data Sheet
HGTP5N120BN, HGT1S5N120BNS
January 2000 File Number 4599.2
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49308.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP5N120BN
TO-220AB
5N120BN
HGT1S5N120BNS
TO-263AB
5N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
Symbol
C
G
E
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

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HGT1S5N120BNS pdf, ピン配列
HGTP5N120BN, HGT1S5N120BNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC,
ICE = 5A,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 18)
- 22 25 ns
- 15 20 ns
- 160 180 ns
- 130 160 ns
- 220
-
µJ
Turn-On Energy (Note 4)
EON2
- 450 600 µJ
Turn-Off Energy (Note 5)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC,
ICE = 5A,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 18)
- 390 450 µJ
- 20 25 ns
- 15 20 ns
- 182 280 ns
- 175 200 ns
- 220
-
µJ
Turn-On Energy (Note 4)
EON2
- 1000 1300 µJ
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
EOFF
RθJC
- 560 800 µJ
-
-
0.75
oC/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
25
VGE = 15V
20
15
10
5
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
35
TJ = 150oC, RG = 25, VGE = 15V, L = 5mH
30
25
20
15
10
5
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3


3Pages


HGT1S5N120BNS 電子部品, 半導体
HGTP5N120BN, HGT1S5N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
FREQUENCY = 1MHz
1.5
CIES
1.0
0.5
COES
0 CRES
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
10
DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
8
6
VGE = 15V
VGE = 10V
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
10-1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
t1
t2
Test Circuit and Waveforms
100
RHRD6120
RG = 25
L = 5mH
+
- VDD = 960V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
6

6 Page



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部品番号部品説明メーカ
HGT1S5N120BNDS

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation
HGT1S5N120BNS

21A/ 1200V/ NPT Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation


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