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HGT1S3N60C3DS の電気的特性と機能

HGT1S3N60C3DSのメーカーはIntersil Corporationです、この部品の機能は「6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S3N60C3DS
部品説明 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGT1S3N60C3DS Datasheet, HGT1S3N60C3DS PDF,ピン配置, 機能
Data Sheet
HGTP3N60C3D, HGT1S3N60C3DS
January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Formerly Developmental Type TA49119.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60C3D
TO-220AB
G3N60C3D
HGT1S3N60C3DS TO-263AB
G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.
Symbol
C
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGT1S3N60C3DS pdf, ピン配列
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = 150oC
6 TC = 25oC
4 TC = -40oC
2
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%
16 TC = 25oC
12V
14
12 VGE = 15V
10V
10
8 9.0V
6 8.5V
4 8.0V
2 7.5V
7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10 TC = -40oC
8
6 TC = 150oC
4 TC = 25oC
2
0
0 1 2 3 45
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16
14 TC = 25oC
12
10
8 TC = -40oC
6 TC = 150oC
4
2
0
01 2 34
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
14
VCE = 360V, RG = 82, TJ = 125oC
12
70
60
10
tSC
8
6
50
40
ISC
30
4 20
2 10
00
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME


3Pages


HGT1S3N60C3DS 電子部品, 半導体
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
15
12
9
100oC
6
150oC
25oC
3
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VEC, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
30
TC = 25oC, dIEC/dt = 200A/µs
25
20
15
trr
ta
10
tb
5
0
0.5 1
IEC, FORWARD CURRENT (A)
4
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
RG = 82
L = 1mH
RHRD460
+
VDD = 480V
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
6

6 Page



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共有リンク

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HGT1S3N60C3DS

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HGT1S3N60C3DS

6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation


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