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HGT1S3N60C3DS の電気的特性と機能

HGT1S3N60C3DSのメーカーはFairchild Semiconductorです、この部品の機能は「6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S3N60C3DS
部品説明 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGT1S3N60C3DS Datasheet, HGT1S3N60C3DS PDF,ピン配置, 機能
HGTP3N60C3D, HGT1S3N60C3D,
SEMICONDUCTOR
HGT1S3N60C3DS
January 1997
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
G
Formerly Developmental Type TA49119.
E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At
At
TC
TC
=
=
25oC .
110oC
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. IC25
IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . .
Switching Safe Operating Area at TJ = 150oC, Fig. 14.
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VGEM
SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 82.
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/ oC
oC
oC
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-9
File Number 4140.1

1 Page





HGT1S3N60C3DS pdf, ピン配列
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = 150oC
6 TC = 25oC
4 TC = -40oC
2
0
4 6 8 10 12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%
16 TC = 25oC
12V
14
12
10 VGE = 15V
8
10V
9.0V
6 8.5V
4 8.0V
2 7.5V
7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10 TC = -40oC
8
6 TC = 150oC
4 TC = 25oC
2
0
0 1 2 3 45
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16
14 TC = 25oC
12
10
8 TC = -40oC
6
4
TC = 150oC
2
0
01 2 34
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
14 VCE = 360V, RGE = 82, TJ = 125oC
12
70
60
10
tSC
8
6
50
40
ISC
30
4 20
2 10
00
10 11 12 13 14 15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-11


3Pages


HGT1S3N60C3DS 電子部品, 半導体
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
15
12
9
100oC
6
150oC
25oC
3
30 TC = 25oC, dIEC/dt = 200A/µs
25
20
15
10
5
trr
tA
tB
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VEC, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
Test Circuit and Waveform
0
0.5
1
IEC, FORWARD CURRENT (A)
4
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD
CURRENT
RG = 82
L = 1mH
RHRD460
+
VDD = 480V
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
10%
EOFF EON
90%
ICE 10%
tD(OFF) I
tFI
tRI
tD(ON) I
FIGURE 21. SWITCHING TEST WAVEFORMS
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
TC)/RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 13) and the conduction losses (PC) are approxi-
mated by PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for EOFF; i.e. the col-
lector current equals zero (ICE = 0).
3-14

6 Page



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共有リンク

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部品番号部品説明メーカ
HGT1S3N60C3D

6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S3N60C3D

UFS Series N-Channel IGBT

Harris Corporation
Harris Corporation
HGT1S3N60C3DS

6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S3N60C3DS

6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation


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