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HGT1S3N60A4DS の電気的特性と機能

HGT1S3N60A4DSのメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S3N60A4DS
部品説明 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGT1S3N60A4DS Datasheet, HGT1S3N60A4DS PDF,ピン配置, 機能
Data Sheet
HGT1S3N60A4DS, HGTP3N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.Fairchildsemi.com
Packaging
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B

1 Page





HGT1S3N60A4DS pdf, ピン配列
HGT1S3N60A4DS, HGTP3N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 125oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
IEC = 3A
IEC = 3A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 5.5 8
ns
- 12 15 ns
- 110 165 ns
-
70 100
ns
- 37
-
µJ
-
90 100
µJ
- 50 80 µJ
- 2.25 -
V
- 29
-
ns
- 19
-
ns
- - 1.8 oC/W
- - 3.5 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
20
VGE = 15V
16
20
TJ = 150oC, RG = 50, VGE = 15V, L = 200µH
16
12 12
88
4
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
4
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B


3Pages


HGT1S3N60A4DS 電子部品, 半導体
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
250
RG = 50, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
200
ICE = 4.5A
150
ICE = 3A
100
ICE = 1.5A
50
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 4.5A
ICE = 3A
100
ICE = 1.5A
0
25 50
75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
303 10
100
RG, GATE RESISTANCE ()
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
700
FREQUENCY = 1MHz
600
500
400
CIES
300
CRES
200
100
0
0
COES
20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.7
DUTY CYCLE < 0.5%, TJ = 25oC
2.6 PULSE DURATION = 250µs
2.5
2.4 ICE = 4.5A
2.3 ICE = 3A
2.2
2.1
2.0 8
ICE = 1.5A
10 12 14
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
20
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
16
12
8
125oC
25oC
4
0
01234
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
64
dIEC/dt = 200A/µs
56
125oC trr
48
40
32 25oC trr
24
16
125oC tb
125oC ta
8
25oC ta
25oC tb
01 2 3 4 5 6
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B

6 Page



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部品番号部品説明メーカ
HGT1S3N60A4DS

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S3N60A4DS

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Intersil Corporation
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