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HGT1S20N60B3S の電気的特性と機能

HGT1S20N60B3SのメーカーはIntersil Corporationです、この部品の機能は「40A/ 600V/ UFS Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S20N60B3S
部品説明 40A/ 600V/ UFS Series N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGT1S20N60B3S Datasheet, HGT1S20N60B3S PDF,ピン配置, 機能
Data Sheet
HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
January 2000 File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60B3
TO-220AB
G20N60B3
HGT1S20N60B3S
TO-263AB
G20N60B3
HGTG20N60B3
TO-247
HG20N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
Symbol
C
G
E
Features
• 40A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB (ALTERNATE VERSION)
EC
G
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

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HGT1S20N60B3S pdf, ピン配列
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
80
TC = 150oC
60
TC = 25oC
40
TC = -40oC
20
0
4 6 8 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
12
100
VGE = 15V 12V
VGE = 10V
80 TC = 25oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
VGE = 9V
60
VGE = 8.5V
40
VGE = 8.0V
20 VGE = 7.5V
VGE = 7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
50
40
VGE = 15V
30
20
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
5000
4000
CIES
FREQUENCY = 1MHz
3000
2000
1000
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
80
TC = 25oC
60
TC = -40oC
40
TC = 150oC
20
0
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
600 15
480 12
VCE = 600V
Ig(REF) = 1.685mA
RL = 30
360 9
240
120
0
0
VCE = 400V
VCE = 200V
TC = 25oC
20 40 60 80
QG, GATE CHARGE (nC)
6
3
0
100
FIGURE 6. GATE CHARGE WAVEFORMS


3Pages


HGT1S20N60B3S 電子部品, 半導体
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBDLD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
6 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.

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共有リンク

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部品番号部品説明メーカ
HGT1S20N60B3S

40A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor
Fairchild Semiconductor
HGT1S20N60B3S

40A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation


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