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K9G8G08U0A の電気的特性と機能

K9G8G08U0AのメーカーはSamsungです、この部品の機能は「FLASH MEMORY」です。


製品の詳細 ( Datasheet PDF )

部品番号 K9G8G08U0A
部品説明 FLASH MEMORY
メーカ Samsung
ロゴ Samsung ロゴ 




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K9G8G08U0A Datasheet, K9G8G08U0A PDF,ピン配置, 機能
K9LAG08U1A
K9G8G08U0A K9G8G08B0A
Preliminary
FLASH MEMORY
K9XXG08XXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
Free Datasheet http://www.datasheet4u.net/

1 Page





K9G8G08U0A pdf, ピン配列
K9LAG08U1A
K9G8G08U0A K9G8G08B0A
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9G8G08U0A-P
K9G8G08U0A-I
K9LAG08U1A-I
K9G8G08B0A-P
Vcc Range
2.7V ~ 3.6V
2.5V ~ 2.9V
Organization
X8
Preliminary
FLASH MEMORY
PKG Type
TSOP1
52ULGA
TSOP1
FEATURES
Voltage Supply
- 2.7V Device(K9G8G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G8G08U0A) : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 25ns(Min.)
Memory Cell : 2bit / Memory Cell
Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9G8G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9G8G08B0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9G8G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9LAG08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
GENERAL DESCRIPTION
Offered in 1Gx8bit, the K9G8G08X0A is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-
formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.
Data in the data register can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-
put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9G8G08X0As extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out
algorithm. The K9G8G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
3
Free Datasheet http://www.datasheet4u.net/


3Pages


K9G8G08U0A 電子部品, 半導体
K9LAG08U1A
K9G8G08U0A K9G8G08B0A
K9LAG08U1A-ICB0/IIB0
A B C DE FG HJ K L M N
NC NC
NC
NC NC NC
7
NC
/RE1
R/B2
IO7-2 IO6-2
IO5-2
NC
6
Vcc /RE2 Vss
IO7-1 IO5-1
Vcc
5
4
/CE1 /CE2
R/B1 /WP2 IO6-1
IO4-1 IO4-2
3
CLE1 CLE2 /WE1
IO0-1 IO2-1
Vss
IO3-2
2
Vss ALE2 /WP1 IO1-1 IO3-1 Vss
1
NC
ALE1 /WE2
IO0-2 IO1-2
IO2-2
NC
NC NC NC
NC NC NC
Preliminary
FLASH MEMORY
PACKAGE DIMENSIONS
52-ULGA (measured in millimeters)
Top View
12.00±0.10
#A1
(Datum A)
(Datum B)
A
B
C
D
E
F
G
H
J
K
L
M
N
Bottom View
2.00
7
12.00±0.10
1.00 10.00 1.00
6 54 3 2
1
1.00
1.00
A
B
0.10 C
12-1.00±0.05
0.1 M C AB
Side View
17.00±0.10
41-0.70±0.05
0.1 M C AB
6
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6 Page



ページ 合計 : 30 ページ
 
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[ K9G8G08U0A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
K9G8G08U0A

FLASH MEMORY

Samsung
Samsung
K9G8G08U0A-W000

FLASH MEMORY DIE

Samsung
Samsung
K9G8G08U0B

FLASH MEMORY

Samsung
Samsung
K9G8G08U0M

(K9XXG08UXM) Flash Memory

Samsung Electronics
Samsung Electronics


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