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HGT1S1N120BNDS の電気的特性と機能

HGT1S1N120BNDSのメーカーはIntersil Corporationです、この部品の機能は「5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S1N120BNDS
部品説明 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGT1S1N120BNDS Datasheet, HGT1S1N120BNDS PDF,ピン配置, 機能
HGTP1N120BND, HGT1S1N120BNDS
Data Sheet
January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49316. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49314.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP1N120BND
TO-220AB
1N120BND
HGT1S1N120BNDS TO-263AB
1N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
Symbol
C
G
E
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,417,385
4,605,948
4,684,413
4,430,792
4,620,211
4,694,313
4,443,931
4,631,564
4,717,679
4,466,176
4,639,754
4,743,952
4,516,143
4,639,762
4,783,690
4,532,534
4,641,162
4,794,432
4,587,713
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.

1 Page





HGT1S1N120BNDS pdf, ピン配列
HGTP1N120BND, HGT1S1N120BNDS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 1.0A
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 4mH
Test Circuit (Figure 20)
IEC = 1.0A
IEC = 1.0A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 13 17 ns
- 11 15 ns
- 75 88 ns
- 258 370 ns
- 385 440
J
- 120 175
J
- 1.3 1.8
V
- - 50 ns
- - 2.1 oC/W
- - 3 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses
include losses due to diode recovery.
Typical Performance Curves Unless Otherwise Specified
6
VGE = 15V
5
4
3
2
1
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
7
TJ = 150oC, RG = 82, VGE = 15V, L = 2mH
6
5
4
3
2
1
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300 TJ = 150oC, RG = 82, L = 4mH, VCE = 960V TC VGE
200 75oC 15V
75oC 13V
110oC 15V
100 110oC 13V
20
VCE = 840V, RG = 82, TJ = 125oC
18
tSC
16
20
18
16
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
10 PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 2.1oC/W, SEE NOTES
5
0.5 1.0
2.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
3.0
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
14
ISC
12
14
12
10
13
13.5 14 14.5
VGE, GATE TO EMITTER VOLTAGE (V)
10
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


HGT1S1N120BNDS 電子部品, 半導体
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
1.0
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00510-5
SINGLE PULSE
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DDUUTTYY FFAACCTTOORR,, DD == tt11 // tt22
PPEEAAKK TTJJ == ((PPDD XX ZZθθJJCC XX RRθθJJCC)) ++ TTCC
10-1
100
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
5
2
TC = 150oC
TC = -55oC
1
0.5
TC = 25oC
0.2
0.1
0
0.4 0.8 1.2 1.6
VEC, FORWARD VOLTAGE (V)
2.0
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
Test Circuit and Waveforms
70
TC = 25oC, dIEC/dt = 200A/µs
60
50
trr
40
30
ta
20
10 tb
0
0.5
1 23
IEC, FORWARD CURRENT (A)
45
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
RG = 82
L = 4mH
RHRD4120
+
- VDD = 960V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
90%
ICE
VCE
td(OFF)I
EOFF
90%
10%
tfI
10%
EON
ICE
td(ON)I
trI
FIGURE 21. SWITCHING TEST WAVEFORMS
6

6 Page



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部品番号部品説明メーカ
HGT1S1N120BNDS

5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Intersil Corporation
Intersil Corporation


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