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PDF HGT1S15N120C3 Data sheet ( Hoja de datos )
| Número de pieza | HGT1S15N120C3 | |
| Descripción | 35A/ 1200V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
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HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
June 1997
35A, 1200V, UFS Series N-Channel IGBTs
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
HGTG15N120C3
PACKAGE
TO-247
BRAND
15N120C3
HGTP15N120C3
HGT1S15N120C3
TO-220AB
TO-262AA
15N120C3
15N120C3
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran-
sistor. The much lower on-state voltage drop varies only moder-
ately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Symbol
C
HGT1S15N120C3S TO-263AB
15N120C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
Formerly Developmental Type TA49145.
G
E
Packaging
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
JEDEC TO-220AB (ALTERNATE VERSION)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4244.3
1 page  
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Typical Performance Curves (Continued)
100 TJ = 150oC, TC = 75oC, RG = 10Ω
L = 1mH, VCE(PK) = 960V
30
20
VGE = 10V
VGE = 15V
10
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
1
5 10 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
50 TJ = 150oC, VGE = 15V, RG = 10Ω
40
30
20
10
0
0 200 400 600 800 1000 1200
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
4000
3500
3000
FREQUENCY = 1MHz
CIES
2500
2000
1500
1000
500
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
14 IG(REF) = 4.21mA, RL = 80Ω, TC = 25oC
12
VCE = 1200V
10
8
VCE = 400V
6 VCE = 800V
4
2
0
0 40 80 120
Qg, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
160
DUTY CYCLE - DESCENDING ORDER
100 0.5
0.2
0.1
0.05
10-1
0.02
0.01
t1
PD
10-2
SINGLE PULSE
10-3
10-5
10-4
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
5
5 Page 
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-263AB
24mm TAPE AND REEL
40mm MIN.
ACCESS HOLE
30.4mm
330mm
13mm
100mm
24.4mm
1.5mm
DIA. HOLE
24mm
4.0mm
2.0mm
1.75mm
CL
16mm
USER DIRECTION OF FEED
COVER TAPE
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 800 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 7 dated 10-95
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HGT1S15N120C3.PDF ] | |
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