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HGT1S14N40F3VLS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGT1S14N40F3VLS
部品説明 330mJ/ 400V/ N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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HGT1S14N40F3VLS Datasheet, HGT1S14N40F3VLS PDF,ピン配置, 機能
January 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in au-
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro-
tection for the logic level gate. Some specifications are
unique to this automotive application and are intended to
assure device survival in this harsh environment.
Formerly Developmental Type 49023
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• Max TJ = 175oC
• SCIS Energy = 330mJ at TJ = 25oC
Package
JEDEC TO-263AB
D² -Pak
G
E
JEDEC TO-220AB
Symbol
EC
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCES
BVCGR
ESCIS25
IC25
IC90
VGES
VGEM
ICO
ICO
PD
TJ, TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Collector to Gate Breakdown Voltage (RGE = 10K)
Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C
Collector Current Continuous, at TC = 25°C, VGE = 4.5V
Collector Current Continuous, at TC = 90°C, VGE = 4.5V
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
L = 2.3mHy, TC = 25°C
L = 2.3mHy, TC = 150°C
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
EMITTER
Ratings
420
420
330
38
35
±10
±12
17
12
262
1.75
-40 to 175
300
260
6
Units
V
V
mJ
A
A
V
V
A
A
W
W/°C
°C
°C
°C
KV
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002

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330mJ/ 400V/ N-Channel Ignition IGBT

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