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PDF HGT1S14N36G3VLS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S14N36G3VLS | |
| Descripción | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HGT1S14N36G3VLS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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June 1995
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
MA
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
GATE
R1
R2
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . .ISCIS
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if IGEM is limited to 10mA.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-55
EMITTER
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
File Number 4008
1 page  
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
2000
1800
FREQUENCY = 1MHz
1600
1400
CIES
1200
1000
800
600
400
200
0
0
CRES
5
COES
10 15
20 25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
REF IG = 1mA, RL = 1.7Ω, TC = +25oC
12
6
10 5
8
VCE = 12V
6
VCE = 4V
4
VCE = 8V
2
4
3
2
1
00
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2 SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100 101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
355
350
345
340
25oC
335
175oC
330
325
0
2000
4000
6000
8000 10000
RGE, GATE-TO- EMITTER RESISTANCE (Ω)
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
2.3mH
RGEN = 25Ω
5V
RG
G
C
DUT
E
VDD
RL
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
10V
RGE = 50Ω
E
+
VCC
- 300V
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
3-59
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGT1S14N36G3VLS.PDF ] | |
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