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HGT1S14N36G3VLS の電気的特性と機能

HGT1S14N36G3VLSのメーカーはFairchild Semiconductorです、この部品の機能は「14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGT1S14N36G3VLS
部品説明 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HGT1S14N36G3VLS Datasheet, HGT1S14N36G3VLS PDF,ピン配置, 機能
December 2001
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
NOTE: May be exceeded if IGEM is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

1 Page





HGT1S14N36G3VLS pdf, ピン配列
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
25
20
15
10
+175oC +25oC
5
-40oC
0
12 34
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
5
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
40
10V 5.0V
30
4.5V
20 4.0V
3.5V
10
3.0V
2.5V
0
02 468
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
10
35
TC = +175oC
30
VGE = 5.0V
25
VGE = 4.5V
20
VGE = 4.0V
15
10
5
0
0 1 2 3 45
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
35
VGE = 4.5V
30
25
20
-40oC
+25oC
+175oC
15
10
5
0
01
234
5
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
1.35
1.25
ICE = 7A
VGE = 4.0V
2.25
ICE = 14A
2.00
VGE = 4.0V
1.15
VGE = 4.5V
1.05
VGE = 5.0V
-25 +25 +75 +125
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
1.75
VGE = 4.5V
1.50
VGE = 5.0V
-25
+25
+75
+125
+175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B


3Pages


HGT1S14N36G3VLS 電子部品, 半導体
Typical Performance Curves (Continued)
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2 SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
101
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
Test Circuits
2.3mH
RGEN = 25
5V
RG
G
C
DUT
E
VDD
355
350
345
340
25oC
335
175oC
330
325
0
2000
4000
6000
8000 10000
RGE, GATE-TO- EMITTER RESISTANCE ()
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
RL
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50
G
C
DUT
10V
RGE = 50
E
+
VCC
- 300V
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

6 Page



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部品番号部品説明メーカ
HGT1S14N36G3VL

14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs

Fairchild Semiconductor
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