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PDF HGT1S12N60C3S Data sheet ( Hoja de datos )
| Número de pieza | HGT1S12N60C3S | |
| Descripción | 24A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP12N60C3, HGT1S12N60C3S
January 2000 File Number 4040.4
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49123.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3S TO-263AB
S12N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Symbol
C
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves (Continued)
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
2500
2000
FREQUENCY = 1MHz
CIES
1500
1000
500
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
100
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
40 CIRCUIT
20
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
600 15
480
VCE = 600V
360
12
9
240
VCE = 400V
VCE = 200V
120
6
3
00
0 10 20 30 40 50 60
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGT1S12N60C3S.PDF ] | |
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