|
|
PDF HGT1S12N60C3S Data sheet ( Hoja de datos )
| Número de pieza | HGT1S12N60C3S | |
| Descripción | 24A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HGT1S12N60C3S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
HGTP12N60C3, HGT1S12N60C3,
SEMICONDUCTOR
HGT1S12N60C3S
January 1997
24A, 600V, UFS Series N-Channel IGBTs
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3 TO-262AA
S12N60C3
HGT1S12N60C3S TO-263AB
S12N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Formerly Developmental Type TA49123.
G
Packaging
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
E
JEDEC TO-262AA
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-29
File Number 4040.3
1 page  
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Typical Performance Curves (Continued)
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
ICE, COLLECTOR-EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
100
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
CIES
FREQUENCY = 1MHz
1500
1000
500
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
600 IG REF = 1.276mA, RL = 50Ω, TC = 25oC 15
480
VCE = 600V
360
12
9
240
VCE = 400V
VCE = 200V
120
6
3
00
0 10 20 30 40 50 60
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
3-33
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGT1S12N60C3S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HGT1S12N60C3 | 24A/ 600V/ UFS Series N-Channel IGBTs | Fairchild Semiconductor |
| HGT1S12N60C3DS | 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Fairchild Semiconductor |
| HGT1S12N60C3DS | 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |  Intersil Corporation |
| HGT1S12N60C3S | 24A/ 600V/ UFS Series N-Channel IGBTs | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |