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HGT1S12N60B3DSのメーカーはFairchild Semiconductorです、この部品の機能は「27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode」です。 |
部品番号 | HGT1S12N60B3DS |
| |
部品説明 | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとHGT1S12N60B3DSダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
December 2001
27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49171. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49173.
Ordering Information
PART NUMBER
HGTP12N60B3D
PACKAGE
TO-220AB
BRAND
12N60B3D
HGTG12N60B3D
HGT1S12N60B3DS
TO-247
TO-263AB
12N60B3D
12N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.
Symbol
C
G
E
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
1 Page HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 12A
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1.0A, dIEC/dt = 200A/µs
IGBT
Diode
- 1.7 2.1
V
- 32 40 ns
- 23 30 ns
- - 1.2 oC/W
- - 1.9 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
30
25
20
15
10
5
0
25
VGE = 15V
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
90 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
80
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
TJ = 150oC, RG = 25Ω, L = 1mH, VCE = 480V TC
VGE
100
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W, SEE NOTES
1
23
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16
14
12
10
8
6
4
2
10
VCE = 360V, RG = 25Ω, TJ = 125oC
100
90
ISC
80
70
60
50
tSC
40
11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
30
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
3Pages HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-120-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = PD x ZθJC x RθJC + TC
100 101
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
50
40
30
100oC
20
10 150oC
25oC
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VEC, FORWARD VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
35
TC = 25oC, dIEC/dt = 200A/µs
30
25
20
trr
ta
15
10 tb
5
0
0 5 10 15 20
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
6 Page | |||
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部品番号 | 部品説明 | メーカ |
HGT1S12N60B3DS | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Fairchild Semiconductor |
HGT1S12N60B3DS | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil Corporation |