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PDF MBRH12030R Data sheet ( Hoja de datos )
| Número de pieza | MBRH12030R | |
| Descripción | (MBRH12020 - MBRH12040R) Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V VRRM
MBRH12020 thru MBRH12040R
VRRM = 20 V - 100 V
IF = 120 A
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
VRRM
VRMS
VDC
20 30 35 40
14 21 25 28
20 30 35 40
Continuous forward current
IF
TC ≤ 136 °C
120
120
120
120
Unit
V
V
V
A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
2000
-40 to 175
-40 to 175
2000
-40 to 175
-40 to 175
2000
-40 to 175
-40 to 175
2000
-40 to 175
-40 to 175
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction
- case
VF IF = 120 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
RthJC
0.65
4
250
0.8
0.65
4
250
0.8
0.65
4
250
0.8
0.65 V
4
250
mA
0.8 °C/W
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRH12030R.PDF ] | |
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