(PDF) BF1009SW Datasheet - Silicon N-Channel MOSFET Tetrode

Número de pieza	BF1009SW
Descripción	Silicon N-Channel MOSFET Tetrode
Fabricantes	Infineon
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No Preview Available ! BF1009SW Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network AGC G2 HF G1 Input Drain GND HF Output + DC EHA07215 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009SW Marking JLs Pin Configuration Package 1 = D 2 = S 3 = G1 4 = G2 SOT343 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS 76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering point1) VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Rthchs 12 25 10 3 200 -55 ... 150 150 280 V mA V mW °C K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Jun-28-2001 Free Datasheet http://www.datasheet4u.net/ 1 page

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PDF BF1009SW Data sheet ( Hoja de datos )