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G7S313UPBF の電気的特性と機能

G7S313UPBFのメーカーはInternational Rectifierです、この部品の機能は「IRG7S313UPBF」です。


製品の詳細 ( Datasheet PDF )

部品番号 G7S313UPBF
部品説明 IRG7S313UPBF
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G7S313UPBF Datasheet, G7S313UPBF PDF,ピン配置, 機能
PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.35
160
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG7S313UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
40
20
160
78
31
0.63
-40 to + 150
300
Typ.
–––
Max.
1.6
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
9/11/09
Free Datasheet http://www.datasheet4u.net/

1 Page





G7S313UPBF pdf, ピン配列
200
VGE = 18V
VGE = 15V
160 VGE = 12V
VGE = 10V
120 VGE = 8.0V
VGE = 6.0V
80
40
0
0 2 4 6 8 10
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
VGE = 18V
160
VGE = 15V
VGE = 12V
VGE = 10V
120 VGE = 8.0V
VGE = 6.0V
80
40
0
0 2 4 6 8 10
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
200
160
120
TJ = 25°C
80 TJ = 150°C
40
0
2 4 6 8 10 12 14 16
VGE (V)
Fig 5. Typical Transfer Characteristics
www.irf.com
IRG7S313UPbF
200
VGE = 18V
VGE = 15V
160 VGE = 12V
VGE = 10V
120 VGE = 8.0V
VGE = 6.0V
80
40
0
0 2 4 6 8 10
VCE (V)
Fig 2. Typical Output Characteristics @ 75°C
200
VGE = 18V
VGE = 15V
160 VGE = 12V
VGE = 10V
120 VGE = 8.0V
VGE = 6.0V
80
40
0
0 2 4 6 8 10
VCE (V)
Fig 4. Typical Output Characteristics @ 150°C
14
IC = 12A
12
10
8 TJ = 25°C
TJ = 150°C
6
4
2
0
0 5 10 15
VGE (V)
Fig 6. VCE(ON) vs. Gate Voltage
20
3
Free Datasheet http://www.datasheet4u.net/


3Pages


G7S313UPBF 電子部品, 半導体
IRG7S313UPbF
A
RG
B
RG
DRIVER
L
C
VCC
Ipulse
DUT
PULSE A
PULSE B
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
0
L
DUT
VCC
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6 www.irf.com
Free Datasheet http://www.datasheet4u.net/

6 Page



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部品番号部品説明メーカ
G7S313UPBF

IRG7S313UPBF

International Rectifier
International Rectifier


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